A constitutive description of the inelastic response of ceramics

The objective of the article is to present a unified model for the dynamic mechanical response of ceramics under compressive stress states. The model incorporates three principal deformation mechanisms: (i) lattice plasticity due to dislocation glide or twinning; (ii) microcrack extension; and (iii) granular flow of densely packed comminuted particles. In addition to analytical descriptions of each mechanism, prescriptions are provided for their implementation into a finite element code as well as schemes for mechanism transitions. The utility of the code in addressing issues pertaining to deep penetration is demonstrated through a series of calculations of dynamic cavity expansion in an infinite medium. The results reveal two limiting behavioral regimes, dictated largely by the ratio of the cavity pressure p to the material yield strength σY. At low values of p/σY, cavity expansion occurs by lattice plasticity and hence its rate diminishes with increasing σY. In contrast, at high values, expansion occurs by microcracking followed by granular plasticity and is therefore independent of σY. In the intermediate regime, the cavity expansion rate is governed by the interplay between microcracking and lattice plasticity. That is, when lattice plasticity is activated ahead of the expanding cavity, the stress triaxiality decreases (toward more negative values) which, in turn, reduces the propensity for microcracking and the rate of granular flow. The implications for penetration resistance to high-velocity projectiles are discussed. Finally, the constitutive model is used to simulate the quasi-static and dynamic indentation response of a typical engineering ceramic (alumina) and the results compared to experimental measurements. Some of the pertinent observations are shown to be captured by the present model whereas others require alternative approaches (such as those based on fracture mechanics) for complete characterization. © 2011 The American Ceramic Society.

Erbium doped materials for a Si-based microphotonics

We have investigated the role of the Si excess on the photoluminescence properties of Er doped substoichiometric SiOx layers. We demonstrate that the Si excess has two competing roles: when agglomerated to form Si nanoclusters (Si-nc) it enhances the Er excitation efficiency but it also introduces new non-radiative decay channels. When Er is excited through an energy transfer from Si-nc, the beneficial effect on the enhanced excitation efficiency prevails and the Er emission increases with increasing Si content. Nevertheless the maximum excited Er fraction is only of the order of percent. In order to increase the concentration of excited Er ions, a different approach based on Er silicate thin film has been explored. Under proper annealing conditions, an efficient luminescence at 1535 nm is found and all of the Er ions in the material is optically active. The possibility to efficiently excite Er ions also through electron-hole mediated processes is demonstrated in nanometer-scale Er-Si-O/Si multilayers. These data are presented and discussed.